j. c/ e.iie.u , o ne. 20 stern ave. springfield, new jersey 07081 rbv2500-RBV2510 prv: 50-1000 volts lo : 25 amperes features: * high current capability * high surge current capability * high reliability * low reverse current * low forward voltage drop * rated isolation-voltage 2000 vac * ideal for printed circuit board * very good heat dissipation * pb / rohs free mechanical data: * case : reliable low cost construction utilizing molded plastic technique * epoxy : ul94v-0 rate flame retardant * terminals : plated lead solderable per mil-std-202, method 208 guaranteed * polarity : polarity symbols marked on case * mounting position : any * weight: 8.17 grams ( approximately ) maximum ratings and electrical characteristics rating at 25 c ambient temperature unless otherwise specified. single phase, half wave, 60 hz, resistive or inductive load. for capacitive load, derate current by 20%. telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 silicon bridge rectifiers rbv25 dimensions in millimeters rating maximum recurrent peak reverse voltage maximum rms voltage maximum dc blocking voltage maximum average forward current tc = 55c peak forward surge current single half sine wave superimposed on rated load (jedec method) current squared time at t < 8.3 ms. maximum forward voltage per diode at if = 12.5 a maximum dc reverse current ta = 25 c at rated dc blocking voltage ta = 100 c typical thermal resistance (note 1) operating junction temperature range storage temperature range symbol vrrm vrms vdc |f(av) ifsm i2t vf ir |r(h) r0jc tj tstg rbv rbv rbv rbv 2500 2501 2502 2504 50 100 200 400 35 70 140 280 50 100 200 400 25 300 375 1.1 10 200 1.45 - 40 to + 1 - 40 to + 1 rbv 2506 600 420 600 50 50 rbv 2508 800 560 800 rbv 2510 1000 700 1000 unit v v v a a a2s v ma ma c/w c c notes : 1. thermal resistance from junction to case with units mounted on a5"x6"x4.9" (12.8cm.x 15.2cm.x 12.4cm.) al. -finned plate nj semiconductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj seini-conduetors is believed to he both accurate and reliable at the time of going to press. i louever. nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. n.i semi-conductors encourages customers lo verily that datasheets are current before placing orders. quality semi-conductor 5
rating and characteristic curves ( rbv2500 - RBV2510 ) fig.1 - derating curve for output rectified current average forward output current, amperes 5 s s k fe he* \ t-sink mounting, t( 5"x6"x4,9"thk. 3cm x 15, 2cm x 12,4cm al. -finned plate \ \ 0 25 50 75 100 125 150 175 case temperature, ( c) m cc o: rj o lu o c o: fig.2 - maximum non-repetitive peak forward surge current 300 a: o s q- 250 r 200 150 50 \ s x. \. 3ms single v^ hal ~v \e \f = 50 s, s /ave c \c method i s ^ v 1 2 4 6 10 20 40 60 100 number of cycles at 60hz fig.3 - typical forward characteristics per diode tn lli ul ml qj 10 < h-~ z uj * 1.0 3wardcl 0 o u. 0.01 0 . ? -/ / / ^ h 1 ^ t 1 f / ? ^ s - /- =uls 1 e width =3 % duty cyc 25 c 30(1. le s 4 0.6 0.8 1.0 1.2 1.4 1.6 1. fig.4 - typical reverse characteristics per diode 20 40 60 80 100 120 percent of rated reverse voltage, (%) forward voltage, volts
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